| |
X-LIGHT
어닐링 시스템
(X-LIGHT
ANNEALING SYSTEM)
관련기술이
필요하신분은 당사로 문의주시기 바랍니다 !!
TEL
: 031-419-6770 (직통)
| 
LTPS
BASIC
|
Polysilicon is a Silicon-based material, which contains numerous Si grains with
sizes ranging from 0.1 to several um. In semiconductor manufacturing,
polysilicon is usually prepared by LPCVD (Low Pressure Chemical Vapor
Deposition) and then annealed above 900°C, i.e. so called SPC (Solid Phase
Crystallization) method. Obviously, the same way could not be applied to FPD
industry since the strain temperature of glass is only about 650°C. Therefore,
Low Temperature Polysilicon (LTPS) technology is the novel technology specific
for FPD application.
Currently there are several approaches in the preparation of LTPS film on
glass or plastic substrate:
- Metal
Induced Crystallization (MIC): It is a kind of SPC method but, compared to
conventional SPC, it can achieve polysilicon under lower temperature (about
500°C - 600°C). This is because a thin metal layer is coated before
crystallization anneal. The metal element is the key in lowering the activation
energy of crystallization.
- Cat-CVD:
This method directly deposits poly-film without further thermal anneal. The
deposition temperature has reportedly gone as low as 300°C. The growth mechanism
involves the catalytic cracking reaction of SiH4-H2 mixture.
- Laser
anneal: This is the most popular method used currently. Excimer laser is used as
an energy source to heat and melt a-Si with low Hydrogen content. It is later
recrystallized as poly-film.
- Next
: 관련기술이
필요하신분은 당사로 문의주시기 바랍니다 !!
TEL
: 031-419-6770 (직통)
|
